Semiconductor Nanowires for Optoelectronic and Energy Applications

Monday, November 20, 2017, 11:30 AM - 1:30 PM PT

Semiconductor Nanowires for Optoelectronic and Energy Applications
Prof. Hoe Tan, IEEE Distinguished Lecturer, Australian National University
Register: Here

Mon Nov 20 - 11:30am: Networking, Pizza & drinks; Noon-1PM: Seminar
      Note this is a change from the usual Tuesday 
Cost: $6; discount for IEEE Members, Students & Unemployed

Host: IEEE Nanotechnology Council

Location: Texas Instruments Building E Conference Center
2900 Semiconductor Dr., Santa Clara, CA 95052
See the TI Building location map and directions

​    The excitement of nanowire research is due to the unique electronic and optical properties of these nanostructures. Both axial and radial heterostructure nanowires have been proposed as nano-building blocks for the next generation devices, which are expected to revolutionize our technological world.
     Unique properties stem from nanowires' large surface area-to-volume ratio, very high aspect ratio, and carrier and photon confinement in two dimensions. These nanowires are usually grown by the so-called vapor-liquid-solid mechanism, which relies on a metal nanoparticle to catalyze and seed the growth. An alternative technique to grow the nanowires is by selective area growth technique, where a dielectric mask is first patterned on the substrate prior to growth.
       In this talk, I will present an overview of compound semiconductor nanowire research activities at The Australian National University. The optical and structural properties of binary and ternary III-V nanowires including GaAs, InGaAs, InP and GaAsSb nanowires grown by metal-organic vapour phase epitaxy will be presented. Various issues such as tapering of the nanowires, compositional non-uniformity along nanowires, crystal structure, carrier lifetime and polarization effect will be discussed. I will also present our results of III-V nanowires grown on Si substrates which are of great interest for the integration of nano-optoelectronic devices on Si platforms. Our results of enhancing the quantum efficiency of nanowires by using plasmonics are promising to improve the performance of nanowire devices.
     Finally, the results from our nanowire lasers, photodetectors, solar cells and photoelectrodes for water splitting will be presented.

Read More
: here and here

​Professor Hoe Tan
 is Head of the Department of Electronic Materials Engineering at the Research School of Physics and Engineering, The Australian National University. 
     He has published over 350 journal papers and holds 4 US patents related to laser diodes and infrared photodetectors. His research interests include epitaxial growth of low-dimensional compound semiconductors, nanostructured optoelectronic devices and ion-implantation processing of compound semiconductors for optoelectronic device applications. 
     Prof. Tan is a Distinguished Lecturer for IEEE Nanotechnology Council (2016) and IEEE Photonics Society (2016-2017).