2D Materials: Advantages and Challenges Towards Application
Ching-Hua (Fiona) Wang, PhD. Student in Electrical Engineering, Stanford University
Tues Aug 15 - 11:30am: Networking, Pizza & drinks
Cost: $6; discount for IEEE Members, Students & Unemployed
Location: Texas Instruments Building E Conference Center
2900 Semiconductor Dr., Santa Clara, CA 95052
See the TI Building location map and directions
Two-dimensional (2D) materials present unique opportunities for next generation ultra-thin electronics. However, practical 2D devices can only be realized after overcoming key challenges: contact resistance, stable doping, and uniform growth.
In this talk I will highlight the recent research our group has implemented to improve contact and doping in BP and MoS2 transistors. I will then show our work beyond transistor applications using 2D materials, such as graphene-Cu interconnects and hBN-RRAM, that are promising for three-dimensional integrated electronics.
Ching-Hua (Fiona) Wang received her master's degree in Electronic Engineering from the National Tsing-Hua University in 2009. She participated in the 20nm CMOS frontend R&D group at TSMC for two years. She is currently pursing her PhD in the Electrical Engineering Department at Stanford University under the supervision of Prof. H.-S. Philip Wong. She has worked on nonvolatile memory in the Ya-Chin King and Chrong-Jung Lin research group before 2014, publishing at the IEDM (2010 and 2013), and received the Taiwanese Government Scholarship for PhD program. Her PhD research is focused on the development of 2D material applications and contact studies.